Penumbuhan Silikon Nanowire dengan Nanokatalis Perak menggunakan Metode HWC-In Plasma-VHF-PECVD melalui Optimasi Tekanan Diky Anggoro, Toto Winata

Abstract

Research on silicon nanowire (SiNW) growth has been performed by using Plasma Enhanced Chemical Vapour Deposition (PECVD).The catalyst used is metallic silver (Ag). The use of silver in the study nanokatalis capped at 0.025 grams. Nanocatalys silver in the deposition on glass substrates by evaporation in a vacuum to form a thin film on a substrate Ag. Theresults nanocatalyst growth characterization by SEM and EDX results in metallic silver-annealing for one hour produces Ag islands 30-110 nm sized. Ag that are annealed for one hour and then used for silicon nanowire growth. As the carrier gas used SiH₄ silane gas with silica precursor flow rate 70 sccm and rf power of 8 watts. Variations in pressure parameters optimization is done at 100, 200, 300 and 400 mTorr. SEM and EDX performed to characterize the silicon nanowire. From the results of SEM and EDX, deposition pressure of 100 mTorr to produce silicon nanowire with a high ratio. Diameter silicon nanowire obtained 70-120 nm and a length of silicon nanowire 200-5000 nm.